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| Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.20.3 Unit: mm 4.00.2 Features * High forward current transfer ratio hFE * Satisfactory linearity of forward current transfer ratio hFE * NPN 3 elements 9.50.2 1.650.2 8.00.2 0.80.25 Solder Dip 5.30.5 4.40.5 0.50.15 1.00.25 2.540.2 7 x 2.57 = 17.780.25 C 1.50.5 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 1 15 2.4 150 -55 to +150 C C Unit V V V A A A W 0.50.15 1: Emitter 2: Base 3: Collector 12345678 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE VCE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 2 500 1.0 Typ Max Unit V A A A V MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Internal Connection 3 2 1 4 5 6 8 7 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJK00007AED 1 PUA3117 PC Ta 20 IC VCE 1.0 IB = 1.2 mA TC = 25C 1 mA 0.8 4 5 IC VBE VCE = 4 V 25C TC = 100C -25C Collector power dissipation PC (W) 16 (1) Collector current IC (A) 0.7 mA 0.6 mA 0.6 0.5 mA 0.4 mA 0.4 0.3 mA 0.2mA 0.2 0.1 mA 12 Collector current IC (A) (1) TC = Ta (2) With a 50 x 50 x 2 mm Al heat sink (3) With a 50 x 25 x 2 mm Al heat sink (4) Without heat sink 3 8 (2) 4 (3) (4) 2 1 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 40 104 hFE IC VCE = 4 V TC = 100C 103 -25C 25C 104 fT I C VCE = 12 V TC = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 10 TC = 100C 25C 1 103 102 102 0.1 -25C 10 10 0.01 0.01 0.1 1 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE = 0 f = 1 MHz TC = 25C 100 Safe operation area Non repetitve pulse TC = 25C (Per circuit) Collector current IC (A) 103 10 ICP t = 1 ms t = 10 ms 102 1 10 0.1 1 0.1 1 10 100 0.01 1 10 100 1 000 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJK00007AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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